Nanowire Template Lateral Epitaxial Growth of Low Dislocation Density GaN

Investigating Organization
Sandia National Laboratories

Principal Investigator(s)
George T. Wang

Subcontractor
None

Funding Source
Building Technologies Program/NETL

Award
DOE Share: $616,000

Contract Period
10/01/06 - 03/31/08

This project proposes to develop inexpensive and low defect density GaN substrates enabling higher efficiency LED devices.  This goal is to be accomplished by developing growth techniques for GaN nanowires which are then induced to grow laterally and coalesce into a high quality planar film.

Content dated 2/08