| Integration of Novel Heterostructure Designs having Low Defect Densities with Polarization Phenomena to Achieve Enhanced Charge Transport, p-type Doping and Hole Injection and Increased Internal Quantum Efficiency
Investigating Organization
Carnegie Mellon University
Principal Investigator(s)
Subcontractor
Univeristy of Michigan
Funding Source
Building Technologies Program/NETL
Award
DOE Share: $1,239,435; Contractor Share: $319,447
Contract Period
10/01/07 – 09/30/10
The objectives of this interdisciplinary program of collaborative research are the conduct of research concerned with theoretical experimental investigations regarding the influence on the density of non-radiative channels and IQE of (a) graded and relaxed InGaN buffer layers having the final composition of the InGaN quantum well (QW) to suppress any negative aspects of polar fields in the action region, (b) dislocations and their reduction in the InGaN buffer layers and the QWs, (c) number of quantum wells and the dependence of the efficiency as a function of injection into these wells, (d) enhanced polarization-based p-type doping and hole injection levels at Ohmic contacts,(e) the use of novel heterostructure design to funnel carriers into the active region for enhanced recombination efficiency and elimination of diffusion beyond this region and (f) the fabrication and characterization of blue and green LEDs with enhanced IQE.
Content dated 2/08 |
