| Innovative Strain Engineered InGaN Materials of High Efficiency Green Light Emission
Investigating Organization
Sandia National Laboratories
Principal Investigator(s)
Michael Coltrin
Subcontractor
None
Funding Source
Building Technologies Program/NETL
Award
DOE Share: $1,797,000
Contract Period
06/01/06 - 05/31/09
This proposal seeks to achieve higher internal quantum efficiency for deep green LEDs by developing strain relaxed InGaN templates. These templates will be grown either by using novel strain relaxation techniques or strain relaxing epitaxial lateral overgrowth techniques.
Content dated 2/08 |
