High-Efficiency Non-Polar GaN-Based LEDs

Investigating Organization
Inlustra Technologies, LLC

Principal Investigator(s)
Dr. Paul T. Fini

Subcontractor
University of California, Santa Barbara

Funding Source
Building Technologies Program/NETL

Award
DOE Share: $1,440,000; Contractor Share: $360,000

Contract Period
10/01/07 – 09/30/10

Inlustra Technologies, LLC, and the University of California, Santa Barbara, propose a comprehensive research program focusing on better understanding the factors that affect III-nitride LED internal quantum efficiency (IQE), and maximizing IQE in blue and green HB-LEDs based on non-polar (Al,In)GaN films.  The objectives of this project center on the development of HB-LED active regions with high internal quantum efficiency, for immediate application in advanced solid-state light engines that are suitable for general illumination.

The target specifications for the proposed HB-LEDs include internal quantum efficiency of at least 90% for blue LEDs, greater than 60% for green LEDs, and packaged LED power at 20 mA greater than 10 mW.

Unlike conventional III-V semiconductors, GaN-based optoelectronic devices have strong (>1 MV/cm) built-in electrical polarization fields, which are oriented in the [0001] c-direction.  The proposed project intends to dramatically increase the IQE of blue and green InGaN HB-LEDs via the use of quantum heterostructures fabricated on the non-polar a- and m-planes.  Another principal objective is to develop a practical means of quantitatively measuring IQE via electroluminescence from actual HB-LED device structures.

Content dated 2/08