Nanostructural Engineering of Nitride Nucleation Layers for GaN Substrate Dislocation Reduction

Investigating Organization
Sandia National Laboratories

Principal Investigator(s)
Daniel D. Koleske, ddkoles@sandia.gov, (505) 844-6543

Subcontractor
None

Funding Source
Building Technologies Program/NETL

Award
DOE Share: $605,000

Contract Period
10/1/06 - 3/31/08

This project proposes to develop MOCVD growth methods to further reduce GaN dislocation densities on sapphire that inhibit device efficiencies. This study will first firmly establish the correlation between the nuclei density and dislocation density. Following this, methods to reduce the nuclei density, while still maintaining the ability to fully coalesce the GaN films, will be investigated.

Content dated 2/07